Electrical characterization of single nanometer-wide Si fins in dense arrays

• Steven Folkersma,
• Janusz Bogdanowicz,
• Andreas Schulze,
• Paola Favia,
• Dirch H. Petersen,
• Ole Hansen,
• Henrik H. Henrichsen,
• Peter F. Nielsen,
• Lior Shiv and
• Wilfried Vandervorst

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

• the technique, this opens the prospect for the use of μ4PP in electrical critical dimension metrology. Keywords: critical dimension metrology; electrical characterization; finFET; micro four-point probe; sheet resistance; Introduction The transition from planar to three-dimensional transistor

• to about 0.5 nm, opening the prospects for its use in electrical critical dimension metrology. As also interestingly shown in the inset of Figure 3b, the measured Rsfin is higher than the sheet resistance Rspad = 135 Ω (dashed red line) measured in a large 80 × 80 μm2 pad having undergone the same